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Publications
Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors
Yeongin Kim†, Jun Min Suh†, Jiho Shin†, Yunpeng Liu†, Hanwool Yeon, Kuan Qiao, Hyun S. Kum, Chansoo Kim, Han Eol Lee, Chanyeol Choi, Hyunseok Kim, Doyoon Lee, Jaeyong Lee, Ji-Hoon Kang, Bo-In Park, Sungsu Kang, Jihoon Kim, Sungkyu Kim, Joshua A. Perozek, Kejia Wang, Yongmo Park, Kumar Kishen, Lingping Kong, Tomás Palacios, Jungwon Park, Min-Chul Park, Hyung-jun Kim, Yun Seog Lee, Kyusang Lee, Sang-Hoon Bae, Wei Kong, Jiyeon Han*, Jeehwan Kim*
Science (Science 2022, 377, 859-864) [PDF] [LINK]
Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants
Byeong Guk Ko, Chi Thang Nguyen Bonwook Gu, Mohammad Rizwan Khan, Kunwoo Park, Hongjun Oh, Jungwon Park, Bonggeun Shong and Han-Bo-Ram Lee*
Dalton Transactions (Dalton Trans. 2021, 50, 17935-17944) [PDF] [LINK]
Wafer-scale production of TMDs and alloy monolayers by nanocrystal conversion for large-scale ultrathin flexible electronics
Jihoon Kim†, Hyojin Seung†, Dohun Kang, Joodeok Kim, Hyeonhu Bae, Hayoung Park, Sungsu Kang, Changsoon Choi, Back Kyu Choi, Ji Soo Kim, Taeghwan Hyeon, Hoonkyung Lee, Dae-Hyeong Kim*, Sangdeok Shim*, and Jungwon Park*
Nano Letters (Nano Lett. 2021, 21, 21, 9153–9163) [PDF] [LINK]
Stable Sub-Loop Behavior in Ferroelectric Si-Doped HfO2
Kyoungjun Lee, Hyeon Jae Lee, Tae Yoon Lee, Hong Heon Lim, Myeong Seop Song, Hyang Keun Yoo, Dong Ik Suh, Jae Gil Lee, Zhongwei Zhu, Alexander Yoon, Matthew R MacDonald, Xinjian Lei, Kunwoo Park, Jungwon Park, Jun Hee Lee*, and Seung Chul Chae*
ACS Applied Materials & Interfaces (ACS Appl. Mater. Interfaces 2019, 11, 38929-38936) [PDF] [LINK]
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
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Tae Yoon Lee, Kyoungjun Lee, Hong Heon Lim, Myeong Seop Song, Sang Mo Yang, Hyang Keun Yoo, Dong Ik Suh, Zhongwei Zhu, Alexander Yoon, Matthew R. MacDonald, Xinjian Lei, Hu Young Jeong, Donghoon Lee, Kunwoo Park, Jungwon Park, and Seung Chul Chae*
ACS Applied Materials & Interfaces (ACS Appl. Mater. Interfaces 2019, 11, 3142-3149) [PDF] [LINK]
Engineering of Ferroelectric Switching Speed in Si Doped HfO2 for High-Speed 1T-FERAM Application
H. K. Yoo, J. S. Kim, Z. Zhu, Y. S. Choi, A. Yoon, M. R. MacDonald, X. Lei, T. Y. Lee, D. Lee, S. C. Chae, J. Park, D. Hemker, J. G. Langan, Y. Nishi and S. J. Hong, IEDM17 (481-484). [PDF]
Engineering of Ferroelectric Switching Speed in Si Doped HfO2 for High-Speed 1T-FERAM Application
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H. K. Yoo, J. S. Kim, Z. Zhu, Y. S. Choi, A. Yoon, M. R. MacDonald, X. Lei, T. Y. Lee, D. Lee, S. C. Chae, J. Park, D. Hemker, J. G. Langan, Y. Nishi and S. J. Hong
IEDM17 (481-484). [PDF]
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